Structural degradation of thermalSiO2on Si by high-temperature annealing: Defect generation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.045307/fulltext
Reference65 articles.
1. The Current Understanding of Charges in the Thermally Oxidized Silicon Structure
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3. Annealing of surface states in polycrystalline‐silicon–gate capacitors
4. O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures
5. Role of oxygen in defect‐related breakdown in thin SiO2films on Si (100)
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