InAs quantum dots: Predicted electronic structure of free-standing versus GaAs-embedded structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.15819/fulltext
Reference20 articles.
1. MOVPE growth of and heterostructures for electronic transport applications
2. Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs
3. Study of the two‐dimensional–three‐dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum‐sized structures
4. Small-particle research: physicochemical properties of extremely small colloidal metal and semiconductor particles
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