MOVPE growth of and heterostructures for electronic transport applications-Reference-Cited by-同舟云学术

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MOVPE growth of and heterostructures for electronic transport applications

Published:1997-01 Issue:1-4 Volume:170 Page:127-131
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Carlsson N.,Anand S.,Carlsson S.-B.,Gustafson B.,Omling P.,Ramvall P.,Samuelson L.,Seifert W.,Wang Q.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures

2. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs

3. High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures

4. 2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine

5. Optimization of modulation‐doped Ga1−xInxAs/InP heterostructures towards extremely high mobilities

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes;Applied Surface Science;2002-05

2. Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes;Applied Physics Letters;2002-03-11

3. Conductance oscillations induced by longitudinal resonant states in heteroepitaxially defined Ga0.25In0.75As/InP electron waveguides;Applied Physics Letters;2000-04-17

4. InAs quantum dots: Predicted electronic structure of free-standing versus GaAs-embedded structures;Physical Review B;1999-06-15

5. Lateral confinement in a resonant tunneling transistor with a buried metallic gate;Applied Physics Letters;1999-01-11

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