Lateral confinement in a resonant tunneling transistor with a buried metallic gate-Reference-Cited by-同舟云学术

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Lateral confinement in a resonant tunneling transistor with a buried metallic gate

Published:1999-01-11 Issue:2 Volume:74 Page:311-313
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wernersson Lars-Erik,Suhara Michihiko,Carlsson Niclas,Furuya Kazuhito,Gustafson Boel,Litwin Andrej,Samuelson Lars,Seifert Werner

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.123008

Reference12 articles.

1. Novel resonant tunneling transistor with high transconductance at room temperature

2. Confinement and single-electron tunneling in Schottky-gated, laterally squeezed double-barrier quantum-well heterostructures

3. Resonant tunneling through the bound states of a single donor atom in a quantum well

4. Shell Filling and Spin Effects in a Few Electron Quantum Dot

5. Planarization of epitaxial GaAs overgrowth over tungsten wires

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3. Gated tunnel diode in oscillator applications with high frequency tuning;Solid-State Electronics;2009-03

4. Lateral current density fronts in asymmetric double-barrier resonant-tunneling structures;Journal of Applied Physics;2003-05-15

5. Characteristics of electron transport through vertical double-barrier quantum-dot structures: Effects of symmetric and asymmetric variations of the lateral confinement potentials;Physical Review B;2002-11-21

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