Planarization of epitaxial GaAs overgrowth over tungsten wires
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360857
Reference5 articles.
1. Fabrication and numerical simulation of the permeable base transistor
2. GaAs permeable base transistors fabricated with 240-mm-periodicity tungsten base gratings
3. Lateral GaAs growth over tungsten gratings on (001) GaAs substrates by metalorganic chemical vapor deposition and applications to vertical field‐effect transistors
4. Lateral Growth Process of GaAs over Tungsten Gratings by Metalorganic Chemical Vapor Deposition
5. GaAs Metalorganic Vapour Phase Epitaxial Overgrowth over nm-Sized Tungsten Wires
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