GaAs permeable base transistors fabricated with 240-mm-periodicity tungsten base gratings-Reference-Cited by-同舟云学术

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GaAs permeable base transistors fabricated with 240-mm-periodicity tungsten base gratings

Published:1988 Issue:12 Volume:35 Page:2446
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nichols K.B.,Mathews R.H.,Hollis M.A.,Bozler C.O.,Vera A.,Murphy R.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/449/00008872.pdf?arnumber=8872

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxially overgrown, stable W–GaAs Schottky contacts with sizes down to 50 nm;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

2. Operation of a ballistic heterojunction permeable base transistor;IEEE Transactions on Electron Devices;1997

3. Planarization of epitaxial GaAs overgrowth over tungsten wires;Journal of Applied Physics;1996-01

4. GaAs Metalorganic Vapour Phase Epitaxial Overgrowth over nm-Sized Tungsten Wires;Japanese Journal of Applied Physics;1995-08-30

5. Design of resonant tunneling permeable base transistors;2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)

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