1. S. Thomas, A. Arthur, K. Elliot, D. Chow, P. Brewer, R. Rajavel, B. Shi, P. Deelman, C. Fields, M. Madhav, International Symposium on Compound Semiconductors, 2003, p. 177.
2. InAs-based heterojunction bipolar transistors
3. Submicron scaling of HBTs
4. Epitaxially overgrown, stable W–GaAs Schottky contacts with sizes down to 50 nm
5. L.-E. Wernersson, L. Jarlskog, A. Lofgren, N. Nilsson, L. Samuelson, W. Seifert, M. Suhara, 1999 Eleventh International Conference on Indium Phosphide and Related Materials, IPRM, 1999, p. 353.