InAs-based heterojunction bipolar transistors

Author:

Maimon S.,Averett K.L.,Wu X.,Koch M.W.,Wicks G.W.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference8 articles.

1. Adachi, S.: ‘Physical properties of III-V semiconductor compounds’, (Wiley 1992), p. 225

2. Epitaxial InAs on InAs Substrates

3. Sze, S.M.: ‘Physics of semiconductor devices’, (Wiley 1981), p. 90

4. Orton, J.W., and Blood, P.: ‘The electrical characterization of semiconductors: measurement of minority carrier properties’, (Academic Press 1990), p. 67

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