Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1459113
Reference14 articles.
1. Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications
2. High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base
3. MOVPE growth of and heterostructures for electronic transport applications
4. InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport
5. Metalorganic vapour phase epitaxy grown quantum-well structures within barriers of InP and GaInP - a comparison
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