Metamorphosis of self-assembled InAs quantum dot through variation of growth rates-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Metamorphosis of self-assembled InAs quantum dot through variation of growth rates

Published:2020-05 Issue: Volume:824 Page:153870
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Tongbram Binita,Saha Jhuma,Sengupta Saumya,Chakrabarti Subhananda^ORCID

Funder

DST Nano Mission India

Indian Space Research Organisation

Department of Information Technology, Ministry of Communications and Information Technology

National Center of Excellence in Technology for Internal Security

IITB

IITB Nanofabrication Facility

Department of Electrical Engineering, IITB

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference23 articles.

1. Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells, Appl;Kim;Phys. Lett.,2015

2. Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer;Liu;Appl. Phys. Lett.,2004

3. Progress in infrared photodetectors since 2000;Downs,2013

4. Size quantization effects in InAs self-assembled quantum dots;Schmidt;Appl. Phys. Lett.,1997

5. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates;Nishi;Appl. Phys. Lett.,1999

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes;Journal of Vacuum Science & Technology A;2023-07-01

2. Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate;Nanomaterials;2023-06-28

3. MOCVD growth and thermal stability analysis of 1.2 µm InGaAs/GaAs multi quantum well structure;Journal of Alloys and Compounds;2022-11

4. In-situ study of InAs quantum dots encapsulated in asymmetric (Al)GaAs confinement barriers;Revista Mexicana de Física;2022-04-06

5. Optical properties of coherent InAs/InGaAs quantum dash-in-a-well for strong 2 μm emission enabled by ripening process;Journal of Alloys and Compounds;2021-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3