First-principles study of leakage current through aSi/SiO2interface
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.195326/fulltext
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1. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
2. X-ray diffraction evidence for the existence of epitaxial microcrystallites in thermally oxidized SiO2 thin films on Si(111) surfaces
3. X-ray diffraction evidence for epitaxial microcrystallinity in thermally oxidized SiO2thin films on the Si(001) surface
4. Si→SiO2transformation: Interfacial structure and mechanism
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