Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)-Reference-Cited by-同舟云学术

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

Published:2016-10-17 Issue:15 Volume:94 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Pfüller Carsten,Corfdir Pierre,Hauswald Christian,Flissikowski Timur,Kong Xiang,Zettler Johannes K.,Fernández-Garrido Sergio,Doğan Pınar,Grahn Holger T.,Trampert Achim,Geelhaar Lutz,Brandt Oliver

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.155308/fulltext

Reference66 articles.

1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy

2. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

3. InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

4. Photoelectrochemical Properties of (In,Ga)N Nanowires for Water Splitting Investigated by in Situ Electrochemical Mass Spectroscopy

5. PiN InGaN nanorod solar cells with high short-circuit current

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