Observation and origin of the Δ manifold in Si:P δ layers-Reference-Cited by-同舟云学术

Observation and origin of the Δ manifold in Si:P δ layers

Published:2020-03-05 Issue:12 Volume:101 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Holt Ann Julie,Mahatha Sanjoy K.^ORCID,Stan Raluca-Maria,Strand Frode S.,Nyborg Thomas^ORCID,Curcio Davide,Schenk Alex K.,Cooil Simon P.^ORCID,Bianchi Marco,Wells Justin W.,Hofmann Philip,Miwa Jill A.

Funder

Natur og Univers, Det Frie Forskningsråd

Aarhus Universitets Forskningsfond

Villum Fonden

Norges Forskningsråd

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.101.121402/fulltext

Reference31 articles.

1. Low-temperature homoepitaxial growth of two-dimensional antimony superlattices in silicon

2. Low‐temperature Si molecular beam epitaxy: Solution to the doping problem

3. Nondestructive imaging of atomically thin nanostructures buried in silicon

4. CMOS platform for atomic-scale device fabrication

5. Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon

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