Intrinsic and H-induced defects atSi−SiO2interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.195403/fulltext
Reference27 articles.
1. Hydrogen induced donor‐type Si/SiO2interface states
2. Hydrogen-Induced Valence Alternation State atSiO2Interfaces
3. Hydrogen-induced thermal interface degradation in (111) Si/SiO2 revealed by electron-spin resonance
4. First-principles calculations for charged states of hydrogen atoms inSiO2
5. Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica
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