Hydrogen induced donor‐type Si/SiO2interface states
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112696
Reference19 articles.
1. Diffusion of radiolytic molecular hydrogen as a mechanism for the post‐irradiation buildup of interface states in SiO2‐on‐Si structures
2. Current-induced hydrogen migration and interface trap generation in aluminum-silicon dioxide-silicon capacitors
3. Study of hydrogen incorporation in MOS-structures after various process steps using nuclear reaction analysis (NRA)
4. Electron spin resonance and instabilities in metal insulator semiconductor systems
5. Chemical kinetics of hydrogen and (111) Si‐SiO2interface defects
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