Hydrogen-induced thermal interface degradation in (111) Si/SiO2 revealed by electron-spin resonance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121335
Reference17 articles.
1. Nitrogen‐silicon reaction and its influence on the dielectric strength of thermal silicon dioxide
2. Nitrogen‐silicon reaction and its influence on the dielectric strength of thermal silicon dioxide
3. High-Temperature Annealing of Oxidized Silicon Surfaces
4. Role of oxygen in defect‐related breakdown in thin SiO2films on Si (100)
5. Thermally induced interface degradation in (111) Si/SiO2traced by electron spin resonance
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