Fully self-consistent calculation of the electronic structure ofn-type InAs accumulation layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.10752/fulltext
Reference12 articles.
1. Effect of Electric and Magnetic Fields on the Self-Consistent Potential at the Surface of a Degenerate Semiconductor
2. Motional binding in InAs with a realistic surface potential
3. Motionally Dependent Bound States in Semiconductor Quantum Wells
4. Theory of optical transitions in inversion layers of narrow-gap semiconductors
5. Electronic properties of two-dimensional systems
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3. A pertinent approximation of the electrostatic potential in a quantized electron accumulation layer induced at a nonideal surface of a narrow-gap semiconductor;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2017-06-27
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5. Near-surface electronic structure on InAs(100) modified with self-assembled monolayers of alkanethiols;Applied Physics Letters;1999-11
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