A pertinent approximation of the electrostatic potential in a quantized electron accumulation layer induced at a nonideal surface of a narrow-gap semiconductor-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A pertinent approximation of the electrostatic potential in a quantized electron accumulation layer induced at a nonideal surface of a narrow-gap semiconductor

Published:2017-06-27 Issue:1 Volume:31 Page:e2260
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Vainer Boris G.¹^ORCID

Affiliation:

1. Rzhanov Institute of Semiconductor Physics of Siberian Branch of the Russian Academy of Sciences; Novosibirsk State University; Novosibirsk Russia

Funder

Russian Foundation for Basic Research

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference53 articles.

1. Density of states of a two-dimensional electron gas at semiconductor surfaces;Betti;Phys Rev B,2001

2. Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process;Abe;Phys Rev B,2002

3. Rashba effect in inversion and accumulation InAs layers;Radantsev;Semiconductors (Fizika i Tekhnika Poluprovodnikov),2002

4. Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy;Colakerol;Phys Rev Lett,2006

5. Classical and quantum solutions of the planar accumulation layer problem within the parabolic effective-mass approximation;Klochikhin;Phys Rev B,2007

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP