Quantized Electron Accumulation States in Indium Nitride Studied by Angle-Resolved Photoemission Spectroscopy-Reference-Cited by-同舟云学术

Quantized Electron Accumulation States in Indium Nitride Studied by Angle-Resolved Photoemission Spectroscopy

Published:2006-12-04 Issue:23 Volume:97 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Colakerol Leyla,Veal T. D.,Jeong Hae-Kyung,Plucinski Lukasz,DeMasi Alex,Learmonth Timothy,Glans Per-Anders,Wang Shancai,Zhang Yufeng,Piper L. F. J.,Jefferson P. H.,Fedorov Alexei,Chen Tai-Chou,Moustakas T. D.,McConville C. F.,Smith Kevin E.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.97.237601/fulltext

Reference19 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. Unusual properties of the fundamental band gap of InN

3. Small band gap bowing in In1−xGaxN alloys

4. Origin of electron accumulation at wurtzite InN surfaces

5. Intrinsic Electron Accumulation at Clean InN Surfaces

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