Near-surface electronic structure on InAs(100) modified with self-assembled monolayers of alkanethiols
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125152
Reference28 articles.
1. The Effect of Sulfur Passivation and Rapid Thermal Annealing on the Properties of InAs MOS Structures with the Oxide Layer Deposited by Reactive Sputtering
2. Observation of Surface Bound State and Two-Dimensional Energy Band by Electron Tunneling
3. Charge Accumulation at InAs Surfaces
4. Motional binding in InAs with a realistic surface potential
5. Fully self-consistent calculation of the electronic structure ofn-type InAs accumulation layers
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1. Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review);Semiconductors;2020-06-30
2. Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol;AIP Advances;2016-05
3. Self-assembled monolayers of alkyl-thiols on InAs: A Kelvin probe force microscopy study;Surface Science;2015-03
4. Evolution of Raman spectra in n-InAs wafer with annealing temperature;Applied Surface Science;2014-01
5. Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s;ACS Nano;2013-04-30
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