Near-band-gap reflectance anisotropy in orderedGa0.5In0.5P
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.16385/fulltext
Reference31 articles.
1. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
2. Excitation intensity dependence of photoluminescence in Ga0.52In0.48P
3. Metalorganic chemical vapor deposition growth of Ga0.5In0.5P ordered alloys by phosphine modulation
4. Polarized band-edge photoluminescence and ordering inGa0.52In0.48P
5. Partial-ordering effects inInxGa1−xP
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