Partial-ordering effects inInxGa1−xP
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.4044/fulltext
Reference27 articles.
1. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
2. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
3. Observation of Strong Ordering inGaxIn1−xPalloy semiconductors
4. Electroreflectance study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy
5. Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxy
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