Resonant photoemission study of the electronic structure of3 keVnitrogen-implanted tantalum
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.035405/fulltext
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1. Synthesis and properties of tantalum nitride films formed by ion beam assisted deposition
2. Glancing-angle X-ray diffraction and X-ray photoelectron spectroscopy studies of nitrogen-implanted tantalum
3. Preparation, structure and properties of TaN and TaC films obtained by ion beam assisted deposition
4. Properties of thin Ta–N films reactively sputtered on Cu/SiO2/Si substrates
5. Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration
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