Affiliation:
1. Walter Schottky Institute Technische Universität München Am Coulombwall 4 85748 Garching Germany
2. Physics Department TUM School of Natural Sciences Technische Universität München Boltzmannstr. 10 85748 Garching Germany
3. Institute of Ion Beam Physics and Materials Research Helmholtz‐Zentrum Dresden‐Rossendorf Bautzner Landstraße 400 01328 Dresden Germany
Abstract
AbstractThe photoelectrochemical performance of Ta3N5 photoanodes is strongly impacted by the presence of shallow and deep defects within the bandgap. However, the role of such states in defining stability under operational conditions is not well understood. Here, a highly controllable synthesis approach is used to create homogenous Ta3N5 thin films with tailored defect concentrations to establish the relationship between atomic‐scale point defects and macroscale stability. Reduced oxygen contents increase long‐range structural order but lead to high concentrations of deep‐level states, while higher oxygen contents result in reduced structural order but beneficially passivate deep‐level defects. Despite the different defect properties, the synthesized photoelectrodes degrade similarly under water oxidation conditions due to the formation of a surface oxide layer that blocks interfacial hole injection and accelerates charge recombination. In contrast, under ferrocyanide oxidation conditions, it is found that Ta3N5 films with high oxygen concentrations exhibit long‐term stability, whereas those possessing lower oxygen contents and higher deep‐level defect concentrations rapidly degrade. These results indicate that deep‐level defects result in rapid trapping of photocarriers and surface oxidation but that shallow oxygen donors can be introduced into Ta3N5 to enable kinetic stabilization of the interface.
Funder
Deutsche Forschungsgemeinschaft
Bayerische Akademie der Wissenschaften
H2020 European Research Council
Alexander von Humboldt-Stiftung