Self-consistently determining structures of charged defects and defect ionization energies in low-dimensional semiconductors
Author:
Funder
National Natural Science Foundation of China
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.035202/fulltext
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1. The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: a review
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3. Characteristics of p-type Mg-doped GaS and GaSe nanosheets
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5. Effective and Noneffective Recombination Center Defects in Cu2ZnSnS4: Significant Difference in Carrier Capture Cross Sections
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