Effective and Noneffective Recombination Center Defects in Cu2ZnSnS4: Significant Difference in Carrier Capture Cross Sections-Reference-Cited by-同舟云学术

Effective and Noneffective Recombination Center Defects in Cu2ZnSnS4: Significant Difference in Carrier Capture Cross Sections

Published:2019-01-11 Issue:3 Volume:31 Page:826-833
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Li Jiqiang¹²,Yuan Zhen-Kun¹²,Chen Shiyou³^ORCID,Gong Xin-Gao¹²,Wei Su-Huai⁴^ORCID

Affiliation:

1. Department of Physics, Key Laboratory for Computational Physical Science (Ministry of Education), State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China

2. Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, Jiangsu, China

3. Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai 200241, China

4. Beijing Computational Science Research Center, Beijing 100193, China

Funder

Ministry of Science and Technology of the People's Republic of China

Fok Ying Tong Education Foundation

Shanghai Municipal Education Commission

Ministry of Industry and Information Technology of the People's Republic of China

National Natural Science Foundation of China

Shanghai Education Development Foundation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.8b03933

Reference63 articles.

1. Fabrication and characterization of Cu2ZnSnS4 thin films deposited by spray pyrolysis technique

2. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering

3. Electrical and optical properties of CuZnSnS thin films prepared by rf magnetron sputtering process

4. Development of thin film solar cell based on Cu2ZnSnS4 thin films

5. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

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