Origin of p-type conductivity in a WSe<sub>2</sub> monolayer-Reference-Cited by-同舟云学术

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Origin of p-type conductivity in a WSe₂ monolayer

Published:2023 Issue:28 Volume:15 Page:12116-12122
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Yu-Zhou¹²,Zhu Guo-Jun¹²^ORCID,Yang Ji-Hui¹²^ORCID

Affiliation:

1. Department of Physics, Key Laboratory for Computational Science (MOE), State Key Laboratory of Surface Physics, Fudan University, Shanghai 200432, China

2. Shanghai Qizhi Institution, Shanghai 200232, China

Abstract

Oxygen substitutions can enhance the formation of VW and reduce its acceptor ionization energies. The resultant defect complex nOSe + VW is very likely to be the origin of the widely observed p-type conductivity.

Funder

National Natural Science Foundation of China

Major State Basic Research Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR01321A

Reference42 articles.

1. Spin and pseudospins in layered transition metal dichalcogenides

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Polycrystalline graphene and other two-dimensional materials

4. Defect Structure of Localized Excitons in a WSe2 Monolayer

5. Point Defects and Localized Excitons in 2D WSe2

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