An extended defect as a sensor for free carrier diffusion in a semiconductor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4775369
Reference20 articles.
1. Theory of cathodoluminescence contrast from localized defects in semiconductors
2. A contribution to the theory of beam‐induced current characterization of dislocations
3. Profile of EBIC dislocation contrast in semiconductors with small diffusion length
4. Confocal photoluminescence: A direct measurement of semiconductor carrier transport parameters
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