Profile of EBIC dislocation contrast in semiconductors with small diffusion length-Reference-Cited by-同舟云学术

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Profile of EBIC dislocation contrast in semiconductors with small diffusion length

Published:2009-08 Issue:8 Volume:6 Page:1983-1986
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Yakimov E. B.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EBIC investigations of dislocations in ELOG GaN;physica status solidi (c);2015-05-11

2. What is the real value of diffusion length in GaN?;Journal of Alloys and Compounds;2015-04

3. An extended defect as a sensor for free carrier diffusion in a semiconductor;Applied Physics Letters;2013-01-07

4. Investigation of electrical and optical properties in semiconductor structures via SEM techniques with high spatial resolution;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2012-11

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