Formation of clean dimers during gas-source growth of Si(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.115341/fulltext
Reference34 articles.
1. Adsorption and dissociation of disilane on Si(001) studied by STM
2. An atomically resolved scanning tunneling microscopy study of the thermal decomposition of disilane on Si(001)
3. Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms
4. Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen
5. Surface Hydrogen Effects on Ge Surface Segregation during Silicon Gas Source Molecular Beam Epitaxy
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