Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen-Reference-Cited by-同舟云学术

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Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen

Published:1997-12 Issue:1-3 Volume:394 Page:91-104
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Owen J.H.G.,Miki K.,Bowler D.R.,Goringe C.M.,Goldfarb I.,Briggs G.A.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference22 articles.

1. An atomically resolved scanning tunneling microscopy study of the thermal decomposition of disilane on Si(001)

2. Ethylene and coadsorbed hydrogen on Si(100)-(2×1): Structure, bonding, and decomposition

3. Direct Tests of Microscopic Growth Models using Hot Scanning Tunneling Microscopy Movies

4. Epitaxial growth of silicon on Si(001) by scanning tunneling microscopy

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2. A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications;Nanomaterials;2021-08-04

3. Decoration of domain boundaries – group IV elements and IV–IV compounds – Si (001);Physics of Solid Surfaces;2018

4. Structure of domain boundaries: group IV elements and IV–IV compounds: Si;Physics of Solid Surfaces;2018

5. Atomic-Scale Choreography of Vapor–Liquid–Solid Nanowire Growth;Accounts of Chemical Research;2017-11-29

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