Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms-Reference-Cited by-同舟云学术

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Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms

Published:1997-12 Issue:1-3 Volume:394 Page:79-90
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Owen J.H.G.,Miki K.,Bowler D.R.,Goringe C.M.,Goldfarb I.,Briggs G.A.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference33 articles.

1. Adsorption and dissociation of disilane on Si(001) studied by STM

2. An atomically resolved scanning tunneling microscopy study of the thermal decomposition of disilane on Si(001)

3. Iterative minimization techniques forab initiototal-energy calculations: molecular dynamics and conjugate gradients

4. Density-matrix electronic-structure method with linear system-size scaling

5. C.M. Goringe, Modell. Simul. Mater. Sci. Eng., submitted for publication.

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1. Chemical Routes for Transfer of Atomic-Scale Patterns;Encyclopedia of Interfacial Chemistry;2018

2. Decoration of domain boundaries – group IV elements and IV–IV compounds – Si (001);Physics of Solid Surfaces;2018

3. Structure of domain boundaries: group IV elements and IV–IV compounds: Si;Physics of Solid Surfaces;2018

4. Hydrogen adsorption and diffusion around Si(0 0 1)/Si(1 1 0) corners in nanostructures;Journal of Physics: Condensed Matter;2014-06-24

5. Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces;The Journal of Physical Chemistry C;2014-05-01

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