Optical and electrical studies of interface traps in the Si/SiO2system by modified junction space-charge techniques
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.5175/fulltext
Reference30 articles.
1. Electron spin resonance of inherent and process induced defects near the Si/SiO2 interface of oxidized silicon wafers
2. Interface traps andPbcenters in oxidized (100) silicon wafers
3. Thermal emission and capture of electrons at sulfur centers in silicon
4. Fundamentals of junction measurements in the study of deep energy levels in semiconductors
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