Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon-Reference-Cited by-同舟云学术

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Study of Electron Traps Associated With Oxygen Superlattices in n‐Type Silicon

Published:2017-09-28 Issue:12 Volume:14 Page:1700136
ISSN:1862-6351
Container-title:physica status solidi c
language:en
Short-container-title:physica status solidi c

Author:

Simoen Eddy¹²,Jayachandran Suseendran¹³,Delabie Annelies¹⁴,Caymax Matty¹,Heyns Marc¹³

Affiliation:

1. ImecKapeldreef 75B‐3001 LeuvenBelgium

2. Department of Solid State Sciences, Ghent UniversityKrijgslaan 281 S19000 GentBelgium

3. KU Leuven, Department of Metallurgy and MaterialsCastle Arenberg 44B‐3001 LeuvenBelgium

4. KU Leuven, Department of ChemistryCelestijnenlaan 200FB‐3001 LeuvenBelgium

Funder

European Commission

Publisher

Wiley

Subject

Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201700136

Reference25 articles.

1. N.Xu N.Damrongplasit H.Takeuchi R. J.Stephenson N. W.Cody A.Yiptong X.Huang M.Mytha R. J.Mears T.‐J.King Liu Tech. Dig. IEEE Int. Electron Devices Meeting − IEDM12 The IEEE (New York) p. 127 (2012).

2. Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology

3. Electron mobility enhancement in (100) oxygen-inserted silicon channel

4. Epitaxial Chemical Vapor Deposition of Silicon on an Oxygen Monolayer on Si(100) Substrates

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