Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.115433/fulltext
Reference38 articles.
1. Nucleation conditions for catalyst-free GaN nanowires
2. Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)
3. Size-dependent Photoconductivity in MBE-Grown GaN−Nanowires
4. Dramatic Reduction of Surface Recombination by in Situ Surface Passivation of Silicon Nanowires
5. Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
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