Adsorption ofNH3on Ge(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.115436/fulltext
Reference23 articles.
1. Atomic-level spatial distributions of dopants on silicon surfaces: toward a microscopic understanding of surface chemical reactivity
2. Arsenic doping kinetics in silicon during gas source molecular beam epitaxy
3. Low-temperature nitridation of silicon surface using NH3-decomposed species in a catalytic chemical vapor deposition system
4. NH3-adsorption on Ge using a cylindrically shaped crystal
5. Dissociative adsorption ofNH3onSi(001)−(2×1)
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1. Passivation of Ge/high-κinterface using RF Plasma nitridation;Semiconductor Science and Technology;2017-11-30
2. Germanium Surface Conditioning and Passivation;Handbook of Cleaning in Semiconductor Manufacturing;2011-02-22
3. Steady-state photolysis of dimesitylbis(trimethylsilyl)germane;Canadian Journal of Chemistry;2007-10-01
4. DFT calculations of NH3 adsorption and dissociation on gallium-rich GaAs(001)-4×2 surface;Chemical Physics Letters;2007-09
5. Adsorption of Na on Ge(001)(2×1) surface;Physica B: Condensed Matter;2006-01
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