DFT calculations of NH3 adsorption and dissociation on gallium-rich GaAs(001)-4×2 surface
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference35 articles.
1. Thermal and plasma‐assisted nitridation of GaAs(100) using NH3
2. Nitridation processes on GaAs(001) surfaces: Optical, structural, and chemical analysis
3. Chemistry and kinetics of the GaN formation by plasma nitridation of GaAs: Anin situreal-time ellipsometric study
4. Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface
5. Growth of Group III Nitrides. A Review of Precursors and Techniques
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2. Adsorption of HCOH and H2S molecules on Al12P12 fullerene: a DFT study;Adsorption;2019-02
3. Adsorption and dissociation of H2O on the Ga-rich GaAs(001)-(4×2) surface: DFT and DFT-D computations with a Ga7As8H11 cluster model;Computational and Theoretical Chemistry;2015-07
4. DFT Study of Water Adsorption and Decomposition on a Ga-Rich GaP(001)(2×4) Surface;The Journal of Physical Chemistry C;2012-08-13
5. A DFT study of reaction pathways of NH3 decomposition on InN (0001) surface;The Journal of Chemical Physics;2012-08-07
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