Thermal and plasma‐assisted nitridation of GaAs(100) using NH3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.115182
Reference13 articles.
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE;Vacuum;2020-02
3. Fabrication of GaN(1−x) Asx , Zinc-Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System;Crystal Research and Technology;2018-07-10
4. Preparation of GaN on GaAs (100) substrate by annealing and post-nitridation;AIP Conference Proceedings;2016
5. Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces;Applied Surface Science;2014-09
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