InAs on InP: Intermediate alloy formation and interface vibrations
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.4919/fulltext
Reference8 articles.
1. Raman study of a single InP/InAs/InP strained quantum well
2. Strain in InAs islands grown on InP(001) analyzed by Raman spectroscopy
3. Signatures of chaos in quantum billiards: Microwave experiments
4. Resonance Raman scattering in InAs near theE1edge
5. Role of the substrate deoxidation process in the growth of strained InAs/InP heterostructures
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1. Intermixing during growth of InAs self-assembled quantum dots in InP: A photoluminescence and tight-binding investigation;Physical Review B;2008-02-29
2. Raman study of optical phonons in ultrathinInAs∕InPsingle strained quantum wells;Physical Review B;2005-08-19
3. Annealing-Induced Group V Intermixing in InAs∕InP Quantum Dots Probed by Micro-Raman Spectroscopy;Electrochemical and Solid-State Letters;2005
4. Electronic states of ultrathin InAs/InP (001) quantum wells: A tight-binding study of the effects of band offset, strain, and intermixing;Physical Review B;2002-11-01
5. Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy;Physical Review B;2002-07-22
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