Raman study of a single InP/InAs/InP strained quantum well
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. Strained-layer superlattices: Physics;Pearsal,1990
2. Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor‐phase epitaxy
3. InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy
4. Atomic layer molecular beam epitaxy of InAs/A1As heterostructures
5. Raman scattering of InAs/AlAs strained-layer superlattices
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1. Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy;Scientific Reports;2023-01-04
2. Optical phonons via oblique-incidence infrared spectroscopy and their deformation potentials in In1−xGaxAs;Journal of Applied Physics;2007-06
3. Phonons inIn0.53Ga0.47As/InP(100)superlattices by infrared reflectance;Physical Review B;2003-10-16
4. Ordering InAs Quantum Dots Formation on GaAs/InP by Low Pressure Metal-Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2001-10-15
5. InAs self-assembled quantum dots on GaAs/InP by low-pressure metal-organic chemical vapour deposition;Semiconductor Science and Technology;2001-07-19
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