Optical investigation in ultrathin InAs/InP quantum wells grown by hydride vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349529
Reference20 articles.
1. Quantum well structures of In0.53Ga0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactor
2. Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy
3. Atomic layer molecular beam epitaxy growth of InAs on GaAs substrates
4. Structural characterization of very thin GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy
5. Photoluminescence in strained-layer quantum wells
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1. Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues;Handbook of Crystal Growth;2015
2. Optical emission from InAs/InP self-assembled quantum dots: evidence for As/P intermixing;Semiconductor Science and Technology;2007-11-01
3. Optical Properties of InAs Quantum Dots Grown on InP (001) Substrate by MOCVD;physica status solidi (b);2001-03
4. Epitaxial growth of InAsxP1−x/InP quantum wells by HVPE;Applied Surface Science;1999-04
5. Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy;Journal of Crystal Growth;1998-09
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