Structural characterization of very thin GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345193
Reference21 articles.
1. Atomic steps in thin GaInAs/lnP quantum‐well structures grown by organometallic vapor phase epitaxy
2. Atomic steps in thin GaInAs/lnP quantum‐well structures grown by organometallic vapor phase epitaxy
3. High-quality InGaAsP/InP single-quantum wells and superlattice structures grown by low-pressure metalorganic vapor phase epitaxy
4. Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy
5. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
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1. Effects of surfactants Sb and Bi on the incorporation of zinc and carbon in III/V materials grown by organometallic vapor-phase epitaxy;Journal of Applied Physics;2006-08-15
2. Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs;Journal of Applied Physics;2002-03-15
3. Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy;Journal of Applied Physics;2000
4. Structural investigation of short period GaInAs/InP superlattices;Applied Physics Letters;1996-07-15
5. Step structure during OMVPE growth of ordered GaInP;Journal of Crystal Growth;1996-05
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