Step structure during OMVPE growth of ordered GaInP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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2. Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
3. Surface Morphology and Formation of Antiphase Boundaries in Ordered (GaIn)P — A TEM Study;Spontaneous Ordering in Semiconductor Alloys;2002
4. Fundamental aspects of organometallic vapor phase epitaxy;Materials Science and Engineering: B;2001-11
5. The initial stages of growth of CuPtB ordered Ga0.52In0.48P/GaAs and Ga0.47In0.53As/InP;Applied Physics Letters;2000-02-21
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