InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103989
Reference23 articles.
1. Novel material properties of strained‐layer superlattices
2. Valence band engineering in strained-layer structures
3. Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces
4. Highly Strained InAsxPl-X/InP Quantum wells Prepared by Flow Modulation Epitaxy
5. Band structure engineering of semiconductor lasers for optical communications
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