Saddle point for oxygen reorientation in the vicinity of a silicon vacancy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.195204/fulltext
Reference31 articles.
1. Thermal donors in silicon: oxygen clusters or self-interstitial aggregates
2. Experimental Evidence of the Oxygen Dimer in Silicon
3. New Oxygen Infrared Bands in Annealed Irradiated Silicon
4. Growth of the 889 cm−1 infrared band in annealed electron‐irradiated silicon
5. Involvement of oxygen‐vacancy defects in enhancing oxygen diffusion in silicon
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