Affiliation:
1. Fluens Technology Group, Scientific Institute of Physical and Chemical Researches Moscow, Vorontsovo pole 10, Shelkovskoe Shosse 871225, 107497 Moscow, Russia
Abstract
The structural, optical, and conductivity properties of silicon film deposited on cerium dioxide buffer layer were studied. The electronic structure of system consists of various defect levels inside band gap. The temperature spatial distribution plays a great role in silicon crystallization. The field destruction of crystal phase and its restoration, after annealing, were investigated.
Subject
General Materials Science