Sequential hole tunneling inn-type AlAs/GaAs resonant-tunneling structures from time-resolved photoluminescence
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.6982/fulltext
Reference20 articles.
1. Determination of Charge Accumulation and Its Characteristic Time in Double-Barrier Resonant Tunneling Structures Using Steady-State Photoluminescence
2. Photoluminescence characterization of vertical transport in double barrier resonant tunneling structures
3. Electrical and spectroscopic studies of space-charged buildup, energy relaxation and magnetically enhanced bistability in resonant-tunneling structures
4. Photoluminescence and space‐charge distribution in a double‐barrier diode under operation
5. Electrical and optical evidence of resonant tunneling of holes in ann+in+double‐barrier diode structure under illumination
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