Carrier injection effects on exciton dynamics in GaAs/AlAs resonant-tunneling diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1209/0295-5075/85/67010/pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN;Applied Sciences;2022-08-05
2. Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework;Micromachines;2021-06-10
3. Electroluminescence on-off ratio control of n−i−n GaAs/AlGaAs-based resonant tunneling structures;Physical Review B;2018-08-01
4. Comparative Simulation of GaAs and GaN Based Double Barriers-resonant Tunneling Diode;Procedia Computer Science;2016
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