Electroluminescence on-off ratio control of n−i−n GaAs/AlGaAs-based resonant tunneling structures-Reference-Cited by-同舟云学术

Electroluminescence on-off ratio control of n−i−n GaAs/AlGaAs-based resonant tunneling structures

Published:2018-08-01 Issue:7 Volume:98 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Cardozo de Oliveira E. R.,Pfenning A.,Guarin Castro E. D.,Teodoro M. D.,dos Santos E. C.,Lopez-Richard V.,Marques G. E.,Worschech L.,Hartmann F.,Höfling S.

Funder

Fundação de Amparo à Pesquisa do Estado de São Paulo

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.98.075302/fulltext

Reference27 articles.

1. Tunneling in a finite superlattice

2. Resonant tunneling in semiconductor double barriers

3. Operation of resonant-tunneling diodes with strong back injection from the collector at frequencies up to 1.46 THz

4. GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing

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