Electrical and optical evidence of resonant tunneling of holes in ann+in+double‐barrier diode structure under illumination
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102638
Reference11 articles.
1. Optical studies of GaAs quantum well based field‐effect transistor
2. Picosecond switching time measurement of a resonant tunneling diode
3. Tunneling escape rate of electrons from quantum well in double-barrier heterostructures
4. Tunneling escape time of electrons from a quantum well under the influence of an electric field
5. Determination of Charge Accumulation and Its Characteristic Time in Double-Barrier Resonant Tunneling Structures Using Steady-State Photoluminescence
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